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Monday, August 19, 2013

PG & Advanced PG Diploma Courses in Healthcare

Osmania University

Admission Notification - 2013

PG & Advanced PG Diploma Courses in Healthcare

Applications are invited from eligible candidates for admission into the following PG Diploma courses:1) Operation Theatre Technology 2) Cardiac Anesthesia Technology 3) Medical Research Assistant 4) Cath Lab Technology 5) Cardiac Medical Lab Technology 6) Perfusion Technology 7) Cardiac Pulmonary Physiotherapy 8) Echo Cardiography & Sonography and Advanced PG Diploma courses: 9) Physician Assistant 10) Emergency Medical Care 11) Medical Imaging Technology 12) Cardiac Technology 13) Dialysis Technology 14) Anesthesia Technology 15) Respiratory Therapy Technology 16) Medical Informatics 17) Health Insurance & Billing 18) Health Care Management.

Application form and ICR sheet for above courses along with the Information Brochure can be downloaded from OU website: Candidates can submit the filled-in applications along with a demand draft for Rs.800/- (towards registration fee) drawn in favour of “The Director, Directorate of Admissions, O.U., Hyderabad”, either in person or by post, to the Director, Directorate of Admissions, Near PGRR Centre for Distance Education, Osmania University, Hyderabad-500007. The last date for submission is 10.09.2013 by 4.00 p.m. The counseling for admissions into above courses will be held on 19.09.2013.

For more details, visit:

Sample Paper - Sri Guru Granth Sahib World University

Sri Guru Granth Sahib World University
Sample Paper (Test for Electronics Lab Technician)

Max. Marks: 50

Time Allowed: One Hour

Instructions for candidates:

1) Write the correct choice (a/b/c/d) in the appropriate boxes on Answer Sheet from the four choices given.
2) No overwriting is allowed. Such answers will not be considered.
3) Use Blue/Black ink pen for filling the answers.
4) There will be no negative marking
5) The carrying/use of any electronic device is prohibited.

Q1. An ac voltage can be converted into a unidirectional voltage by using

(a) A power amplifier circuit (b) An oscillator circuit
(c) A multivibrator circuit (d) A rectifier circuit

Q2. An ideal voltage source is one which has

(a) Very high internal resistance (b) Very low internal resistance
(c) Zero internal resistance (d) Infinite internal resistance

Q3. A device whose characteristics are very close to that of an ideal current source is a

(a) Vacuum diode (b) Transistor in common base mode
(c) Field-effect transistor (d) Zener diode

Q4. Resistance has unit in

(a) Ohm (b) Mho
(c) Ampere (d) Candela

Q5. In series circuits:

(a) Voltage across each resistance will be same. (b) Current across each resistance will be same.
(c) Voltage and Current across each resistance will be same (d) None

Q6. Silicon diode has cut in voltage

(a) 0.6 or 0.7 (b) 0.2 or 0.3
(c) Both a & b (d) None

Q7. Zener diode is mostly used as

(a) Voltage Regulator (b) Balun
(c) Directional coupler (d) None

Q8. Capacitor and inductor can be used as

(a) Energy storage components (b) Filter components
(c) Both a& b (d) None

Q9. Thevenin’s equivalent circuit represents

(a) Open circuit voltage source with series thevenin resistance
(b) Open circuit voltage source with parallel thevenin resistance
(c) Both a& b
(d) None

Q10. An intrinsic semiconductor at absolute zero temperature

(a) Behaves like an insulator (b) Has a large number of holes
(c) Has a few holes and same number of electrons (d) Behaves like a metallic conductor

Q11. In a semiconductor diode, the barrier potential offers opposition to only

(a) Majority carriers in both regions (b) Minority carriers in both regions
(c) Free electrons in the N region (d) Holes in the P region

Q12. A Zener diode

(a) Has a high forward voltage rating (b) Has a sharp breakdown at low reverse voltage
(c) is useful as an amplifier (d) Has a negative resistance

Q13. The light-emitting diode (LED)

(a) Is usually made from silicon
(b) Uses a reverse biased junction
(c) Gives a light output which increases with increase in temperature
(d) Depends on the recombination of holes and electrons

Q14. In a centre-tap full wave rectifier, Vm is the peak voltage between the center-tap and one end of secondary. The maximum voltage across the reverse biased diode is

(a) Vm (b) Vm/2
(c) 2Vm (d) None of the above

Q15. In a PNP transistor, the electrons flow

(a) out of the transistor at the collector and base leads
(b) Into the transistor at the emitter and base leads
(c) Into the transistor at the collector and base leads
(d) out of the transistor at the emitter and base leads

Q16. The operation of a JFET involves

(a) a flow of minority carriers (b) a flow of majority carriers
(c) Recombination (d) Negative resistance

Q17. The Q point in a voltage amplifier is selected in the middle of the active region because

(a) It gives a distortionless output (b) The operating point then becomes very stable
(c) The circuit then requires less number of resistors (d) It then requires a small dc voltage

Q18. In an amplifier, the coupling capacitors are used for……………………

(a) To control the output (b) To limit the bandwidth
(c) To match the impedances (d) To prevent dc mixing with input or output

Q19. An amplifier circuit of voltage gain 100, gives 2V output. The value of input voltage is

(a) 200V (b) 50V
(c) 20mV (d) 2mV

Q20. Heat sinks are used in power amplifier circuits

(a) To increase the output power
(b) To reduce heat losses in the transistor
(c) To increase the voltage gain of the power amplifier
(d) To increase the collector dissipation rating of the transistor

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